View 2sd2440 datasheet:

2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V : V = 18 V EBO • Low saturation voltage: V = 1.2 V (max) (I = 5 A, I = 1 A) CE (sat) C B • High speed: t = 1 µs (typ.) (I = 5 A, I = ±0.5 A) f C B • High DC current gain: h = 200 (min) (V = 5 V, I = 0.5 A) FE CE C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 18 V DC IC 6 Collector current A Pulse ICP 12 JEDEC ? Base current IB 2 A JEITA ? Collector power dissipation PC 40 W TOSHIBA 2-16F1A (Tc = 25°C) Weight: 5.8 g (typ.) Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150