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View 2sd2441 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2441_e

Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45° 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0± 0.15 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 10 V marking Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A 1:Base 2:Collector EIAJ:SC–62 Collector current IC 1.5 A 3:Emitter Mini Power Type Package Collector power dissipation PC* 1 W Marking symbol : 1V Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C *

Keywords

 2sd2441 e Datasheet, Design, MOSFET, Power

 2sd2441 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2441 e Database, Innovation, IC, Electricity

 

 
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