View 2sd2449 datasheet:

2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 150 W (Tc = 25°C) Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? Equivalent Circuit TOSHIBA 2-21F1A Weight: 9.75 g (typ.) COLLECTOR BASE ? 10 ? EMITTER 1 2003-02-04 2SD2449 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition