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View 2sd2457 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2457_e

Transistor 2SD2457 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45° Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 3.0± 0.15 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit marking Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5 V 1:Base Peak collector current ICP 3 A 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package Collector current IC 1.5 A Collector power dissipation PC* 1 W Marking symbol :

Keywords

 2sd2457 e Datasheet, Design, MOSFET, Power

 2sd2457 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2457 e Database, Innovation, IC, Electricity

 

 
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