View 2sd2460 e datasheet:

Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V 1.27 1.27 Collector to emitter voltage VCEO 20 V 2.54± 0.15 Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A 1:Emitter 2:Collector EIAJ:SC–72 Collector current IC 0.7 A 3:Base New S Type Package Collector power dissipation PC 300 mW Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit I