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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2461

2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.1 A) CE C • Low saturation voltage: V = 0.3 V (typ.) (I = 0.5 A, I = 5 mA) CE (sat) C B Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current A Pulse ICP 4 Base current IB 0.4 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 1 2003-02-04 2SD2461 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ.

Keywords

 2sd2461 Datasheet, Design, MOSFET, Power

 2sd2461 RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2461 Database, Innovation, IC, Electricity

 

 
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