View 2sd2462 datasheet:

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C • Low saturation voltage: V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B • Complementary to 2SB1602 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V DC IC 3 Collector current A Pulse ICP 6 Base current IB 0.6 A Collector power dissipation PC 1.3 W JEDEC ? Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 1 2003-02-04 2SD2462 Electrical Characteristics (Ta = 25°C) Characteristics Sy