View 2sd2462 datasheet:

2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm � High DC current gain: hFE (1) = 800 to 3200 (V = 5 V, I = 0.2 A) CE C � Low saturation voltage: V = 0.4 V (typ.) (I = 1 A, I = 10 mA) CE (sat) C B � Complementary to 2SB1602 Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050