View 2sd2480 datasheet:

2SD2480 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2480 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 8 V DC IC 2 Collector current A Pulse ICP 3 JEDEC ? Base current IB 0.5 A JEITA ? Collector power dissipation PC 1.3 W TOSHIBA 2-8M1A Junction temperature Tj 150 °C Weight: 0.55 g (typ.) Storage temperature range Tstg -55 to 150 °C Equivalent Circuit COLL