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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2525

2SD2525 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 (min) • Low saturation voltage: V = 0.4 V (typ.) (I = 2 A, I = 0.2 A) CE (sat) C B • Complementary to 2SB1640 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V DC IC 3 Collector current A Pulse ICP 6 Base current IB 0.5 A Collector power dissipation PC 1.8 W JEDEC ? Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-10T1A Weight: 1.5 g (typ.) 1 2003-02-04 2SD2525 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min T

Keywords

 2sd2525 Datasheet, Design, MOSFET, Power

 2sd2525 RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2525 Database, Innovation, IC, Electricity

 

 
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