View 2sd2526 datasheet:

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C • Complementary to 2SB1641 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V DC 5 Collector current IC A Pulse 8 Base current IB 0.5 A JEDEC ? Collector power dissipation PC 1.8 W JEITA ? Junction temperature Tj 150 °C TOSHIBA 2-10T1A Storage temperature range Tstg -55 to 150 °C Weight: 1.5 g (typ.) Equivalent Circuit COLLECT