View 2sd2536 datasheet:

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2536 Switching Applications Unit: mm Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C • Low saturation voltage: V = 1.2 V (max) CE (sat) (I = 0.7 A, V = 4.2 V) C BH • Zener diode included between collector and base. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 85 V Collector-emitter voltage VCEO 100 ± 15 V Emitter-base voltage VEBO 6 V Bias voltage VB 20 V Collector current IC 2 A Collector power dissipation PC 0.9 W JEDEC TO-92MOD Base current IB 0.5 A JEITA ? Junction temperature Tj 150 °C TOSHIBA 2-5J1A Storage temperature range Tstg -55 to 150 °C Weight: