View 2sd2565 e datasheet:

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 2.5± 0.1 1.05 6.9± 0.1 ± 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as +0.1 well as stand-alone fixing to the printed circuit board. 0.45–0.05 2.5± 0.5 2.5± 0.5 1 2 3 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Note: In addition to the 1:Emitter Collector to base voltage VCBO 400 V lead type shown in 2:Collector the upper figure, the 3:Base Collector to emitter voltage VCEO 400 V type as shown in MT2 Type Packag