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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sd2568

2SD2568 Transistors Power Transistor(400V,0.5A) 2SD2568 Features 1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 0.5 A 10 Collector power dissipation PC W(Tc=25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55 ? +150 °C Packaging specifications and hFE Type 2SD2568 Package CPT3 hFE PQ Code TL Basic ordering unit (pieces) 2500 Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 - - V IC = 50µA Collector-emitter breakdown voltage BVCEO 400 - - V IC = 1mA Emitter-base breakdown voltage BVEBO 7

Keywords

 2sd2568 Datasheet, Design, MOSFET, Power

 2sd2568 RoHS, Compliant, Service, Triacs, Semiconductor

 2sd2568 Database, Innovation, IC, Electricity

 

 
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