View 2sd2575 e datasheet:

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to base voltage VEBO 10 V Peak collector current ICP*1 9 A 1 2 3 1:Emitter Collector current IC 5 A 2:Collector 3:Base Collector power dissipation PC 750 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C *1 Measuring time: t = 380µ sec Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0