View 2sd2579 datasheet:

Ordering number:5795 NPN Triple Diffused Planar Silicon Transistor 2SD2579 Color TV Horizontal Deflection Output Applications Features Package Dimensions · High speed. unit:mm · High breakdown voltage (VCBO=1500V). 2039D · High reliability (Adoption of HVP process). [2SD2579] · Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1:Base 2:Collector 3:Emitter 5.45 5.45 SANYO:TO3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 8 A Collector Current (pulse) ICP 20 A Collector Dissipation PC 3.0 W Tc=25?C 60 W Junction Temperature Tj 150 ?C Storage Temperatur