View 2sd2584 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (V = 3 V, I = 3 A) CE C • Low saturation voltage: V = 1.5 V (max) (I = 3 A) CE (sat) C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 6 V DC IC 7 Collector current A Pulse ICP 10 Base current IB 0.7 A JEDEC ? Ta = 25°C 1.5 JEITA ? Collector power PC W dissipation Tc = 25°C 20 TOSHIBA 2-7B5A Junction temperature Tj 150 °C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 °C Equivalent Circuit COLLECTOR BASE
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2sd2584 Datasheet, Design, MOSFET, Power
2sd2584 RoHS, Compliant, Service, Triacs, Semiconductor
2sd2584 Database, Innovation, IC, Electricity
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