View 2sd600k datasheet:

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions · High breakdown voltage VCEO 100/120V, High unit:mm current 1A. 2009B · Low saturation voltage, excellent hFE linearity. [2SB631, 631K/2SD600, 600K] 1 : Emitter 2 : Collector 3 : Base ( ) : 2SB631, 631K JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol 2SB631, D600 2SB631K, D600K Unit Conditions Collector-to-Base Voltage VCBO (–)100 (–)120 V Collector-to-Emitter Voltage VCEO (–)100 (–)120 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 1 W Tc=25?C 8 W Junction Temperature Tj