View 2sd601a e datasheet:

Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB709A +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.1 to 0.3 0.4± 0.2 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Collector current IC 100 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW