View 2sd602 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit: mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SD602 30 VCBO V base voltage 2SD602A 60 0.1 to 0.3 0.4± 0.2 Collector to 2SD602 25 VCEO V emitter voltage 2SD602A 50 Emitter to base voltage VEBO 5 V 1:Base JEDEC:TO–236 Peak collector current ICP 1 A 2:Emitter EIAJ:SC–59 Collector current IC 500 mA 3:Collector Mini Type Package Collector power dissip
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2sd602 e Datasheet, Design, MOSFET, Power
2sd602 e RoHS, Compliant, Service, Triacs, Semiconductor
2sd602 e Database, Innovation, IC, Electricity
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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