View 2sd667 datasheet:

2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base voltage VEBO 55V Collector current IC 11A Collector peak current iC(peak) 22A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –50 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SD667 2SD667A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 120 — — 120 — — V IC = 10 µ A, IE = 0 breakdown voltage Collector t