View 2sd965 e datasheet:

Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 40 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V 1 2 3 1:Emitter Peak collector current ICP 8 A 2:Collector Collector current IC 5 A 3:Base 2.54± 0.15 JEDEC:TO–92 Collector power dissipation PC 0.75 W EIAJ:SC–43A Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C)