View 2sd965 utc datasheet:

UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V Collector dissipation(Ta=25°C) Pc 750 mW Collector current Ic 5 A Junction Temperature Tj 150 °C Storage Temperature TSTG -65 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=100µA,IE=0 40 V Co