View 2sj201 datasheet:

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Y | = 5.0 S (typ.) fs Complementary to 2SK1530 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V Gate-source voltage VGSS ±20 V Drain current (Note 1) ID -12 A Drain power dissipation (Tc = 25°C) PD 150 W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Marking JEDEC ? JEITA ? TOSHIBA 2-21F1B Weight: 9.75 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut-off current IDSS VDS = -200 V, VGS = 0 ? ? -1.0 mA Gate leakage current I