View 2sj274 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2063A · Low-voltage drive. [2SJ274] · Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –100 V Gate-to-Source Voltage VGSS ±15 V Drain Current (DC) ID –12 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% –48 A 2.0 W Allowable Power Dissipation PD Tc=25° C 30 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Char
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2sj274 Datasheet, Design, MOSFET, Power
2sj274 RoHS, Compliant, Service, Triacs, Semiconductor
2sj274 Database, Innovation, IC, Electricity
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