View 2sj313 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2013 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20
Keywords
2sj313 Datasheet, Design, MOSFET, Power
2sj313 RoHS, Compliant, Service, Triacs, Semiconductor
2sj313 Database, Innovation, IC, Electricity
