View 2sj315 datasheet:

2SJ315 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSIV) 2SJ315 DC-DC Converter Unit: mm FEATURES 4- Volt gate drive Low drain-source ON resistance : R = 0.25 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k?) VDGR -60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -5 Drain current A Pulse (Note 1) IDP -20 JEDEC ? Drain power dissipation (Tc = 25°C) PD 20 W JEITA SC-64 Channel temperature Tch 150 °C TOSHIBA 2-7B1B Storage temperature range