View 2sj316 datasheet:

Ordering number:EN4309 P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2062A · Low-voltage drive. [2SJ316] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –12 V Gate-to-Source Voltage VGSS ±15 V Drain Current (DC) ID –1 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% –4 A Tc=25?C 3.5 W Allowable Power Dissipation PD Mounted on ceramic board (250mm2? 0.8mm) 1.5 W ?C Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta =