View 2sj334 datasheet:

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 29 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 23 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k?) VDGR -60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -30 A Drain current Pulse (Note 1) IDP -120 A Drain power dissipation (Tc = 25°C) PD 45 W JEDEC ? Single pulse avalanche energy EAS 936 mJ (Note 2) JEITA