View 2sj338 datasheet:

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS ±20 V Drain current (Note 1) ID -1 A Power dissipation (Tc = 25°C) PD 20 W Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note 1: Please use devices on condition that the channel temperature is JEDEC ? below 150°C. JEITA SC-64 TOSHIBA 2-7B1B Marking Weight: 0.36 g (typ.) JEDEC ? JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2002-06-27 2SJ338