View 2sj339 datasheet:

Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2063A · 4V drive. [2SJ339] · Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –25 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% –100 A 2 W Allowable Power Dissipation PD Tc=25?C 40 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristi