View 2sj342 datasheet:

2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.8~-2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC ? Characteristics Symbol Rating Unit JEITA ? TOSHIBA 2-4E1E Drain-source voltage VDS -50 V Gate-source voltage VGSS -7 V Weight: 0.13 g (typ.) DC drain current ID -50 mA Drain power dissipation PD 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = -7 V, VDS = 0 ? ?