View 2sj343 datasheet:

2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.8~-2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1826 Marking Equivalent Circuit Maximum Ratings (Ta = JEDEC TO-236MOD = 25°C) = = JEITA SC-59 Characteristics Symbol Rating Unit TOSHIBA 2-3F1F Drain-source voltage VDS -50 V Weight: 0.012 g (typ.) Gate-source voltage VGSS -7 V DC drain current ID -50 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS =