View 2sj344 datasheet:

2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.8~-2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1827 Marking Equivalent Circuit JEDEC ? Maximum Ratings (Ta = = 25°C) = = JEITA SC-70 Characteristics Symbol Rating Unit TOSHIBA 2-2E1E Drain-source voltage VDS -50 V Weight: 0.006 g (typ.) Gate-source voltage VGSS -7 V DC drain current ID -50 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = -7 V,