View 2sj345 datasheet:

2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.5~-1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC TO-236MOD JEITA SC-59 Characteristics Symbol Rating Unit TOSHIBA 2-3F1F Drain-source voltage VDS -20 V Weight: 0.012 g (typ.) Gate-source voltage VGSS -7 V DC drain current ID -50 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = -7 V, VDS = 0 ? ? -1