View 2sj346 datasheet:

2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit: mm Analog Switch Applications • Low threshold voltage: Vth = -0.5~-1.5 V • High speed • Small package • Complementary to 2SK1829 Marking Equivalent Circuit Maximum Ratings (Ta = = 25°C) = = JEDEC ? Characteristics Symbol Rating Unit JEITA SC-70 Drain-source voltage VDS -20 V TOSHIBA 2-2E1E Gate-source voltage VGSS -7 V Weight: 0.006 g (typ.) DC drain current ID -50 mA Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gateate leakage current IGSS VGS = -7 V, VDS = 0 ? ? -1 µA D