View 2sj348 datasheet:

Ordering number:ENN6421 P-Channel Silicon MOSFET 2SJ348 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2052C · 4V drive. [2SJ348] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –30 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% –120 A 1.75 W Allowable Power Dissipation PD Tc=25?C 70 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit