View 2sj377 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ377 Relay Drive, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.16 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k?) VDGR -60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -5 A Drain current Pulse (Note 1) IDP -20 A Drain power dissipation (Tc = 25°C) PD 20 W JEDEC ? Single pulse avalanche energy EAS 273 mJ JEITA SC-64
Keywords
2sj377 Datasheet, Design, MOSFET, Power
2sj377 RoHS, Compliant, Service, Triacs, Semiconductor
2sj377 Database, Innovation, IC, Electricity
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