View 2sj580 datasheet:

Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistanse. unit : mm • Ultrahigh-speed switching. 2062A • 4V drive. [2SJ580] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --1.8 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --7.2 A Mounted on a ceramic board (250mm2 0.8mm) 1.5 W Allowable Power Dissipation PD Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at