View 2sj612 datasheet:

Ordering number : ENN7178 2SJ612 P-Channel Silicon MOSFET 2SJ612 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2062A • 2.5V drive. [2SJ612] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 (Bottom view) 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --2.5 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% --10 A Mounted on a ceramic board (250mm2 0.8mm) 1.0 W Allowable Power Dissipation PD Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Charact