View 2sj619 datasheet:

2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ619 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: R = 0.15 ? (typ.) DS (ON) • High forward transfer admittance: ?Y ? = 7.7 S (typ.) fs • Low leakage current: IDSS = -100 µA (max) (V = -100 V) DS • Enhancement-model: V = -0.8 to -2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -100 V Drain-gate voltage (RGS = 20 k?) VDGR -100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -16 Drain current A Pulse (Note 1) IDP -64 JEDEC ? Drain power dissipation (Tc = 25°C) PD 75 W JEITA SC-97 Single pulse av