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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sj620

2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-?-MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: R = 63 m? (typ.) DS (ON) • High forward transfer admittance: |Y | = 15 S (typ.) fs • Low leakage current: I = -100 µA (max) (V = -100 V) DSS DS • Enhancement-model: V = -0.8 to -2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Drain-source voltage VDSS -100 V Drain-gate voltage (RGS = 20 k?) VDGR -100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -18 Drain current A Pulse (Note 1) IDP -72 Drain power dissipation (Tc = 25°C) PD 125 W JEDEC ? Single pulse avalanche energy

Keywords

 2sj620 Datasheet, Design, MOSFET, Power

 2sj620 RoHS, Compliant, Service, Triacs, Semiconductor

 2sj620 Database, Innovation, IC, Electricity

 

 
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