View 2sk1035 datasheet:

Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit : mm Features 10.0± 0.2 4.2± 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.2?(typ) 5.5± 0.2 2.7± 0.2 High-speed switching : tf = 100ns(typ) No secondary breakdown o3.1± 0.1 Low-voltage drive Applications DC-DC converter 1.3± 0.2 1.4± 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8± 0.1 Motor drive 2.54± 0.25 5.08± 0.5 1 2 3 Absolute Maximum Ratings (Tc = 25?C) 1 : Gate Parameter Symbol Rating Unit 2 : Drain 3 : Source Drain-Source breakdown voltage VDSS 150 V TO-220 Full Pack Package (a) Gate-Source voltage VGSS ±20 V at 4V drive ID ±12 A Drain current Pulse IDP ±25 A TC =25?C 45 Allowable power PD W dissipation Ta =25?C 2 Channel temperature Tch 150 ?C Storage temperature Ts