View 2sk1036 datasheet:

Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit : mm Features 10.0± 0.2 4.2± 0.2 Low ON-resistance RDS(on) : RDS(on)= 0.23?(typ) 5.5± 0.2 2.7± 0.2 High-speed switching : tf = 80ns(typ) No secondary breakdown o3.1± 0.1 Applications DC-DC converter 1.3± 0.2 Non-contact relay 1.4± 0.1 Solenoid drive +0.2 0.5 -0.1 0.8± 0.1 Motor drive 2.54± 0.25 5.08± 0.5 Absolute Maximum Ratings (Tc = 25?C) 1 2 3 Parameter Symbol Rating Unit 1 : Gate Drain-Source breakdown voltage VDSS 250 V 2 : Drain Gate-Source voltage VGSS ±20 V 3 : Source TO-220 Full Pack Package (a) DC ID ±10 A Drain current Pulse IDP ±20 A TCC =25?C 50 Allowable power PD W dissipation TaC =25?C 2 Channel temperature Tch 150 ?C Storage temperature Tstg –55 to +150 ?C Elect