View 2sk1103 datasheet:

Silicon Junction FETs (Small Signal) 2SK1103 2SK1103 Silicon N-Channel Junction Unit : mm For switching +0.2 2.8 –0.3 Complementary with 2SJ163 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS – 65 V 0.4± 0.2 Drain current ID ±20 mA Gate current IG 10 mA 1 : Source JEDEC : TO-236 Allowable power dissipation PD 150 mW 2 : Drain EIAJ : SC-59 Channel temperature Tch 150 ?C 3 : Gate Mini Type Package (3-pin) Storage temperature Tstg – 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 0.2 6 mA Gate-Source leakage curre