View 2sk1104 datasheet:

Silicon Junction FETs (Small Signal) 2SK1104 2SK1104 Silicon N-Channel Junction Unit : mm For switching 4.0± 0.2 Complementary with 2SJ164 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 1.27 1.27 1 : Source Gate-Drain voltage VGDS – 65 V 2.54± 0.15 2 : Gate Drain current ID ±20 mA 3 : Drain Gate current IG 10 mA New S Type Package Allowable power dissipation PD 300 mW Channel temperature Tch 150 ?C Storage temperature Tstg – 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS * VDS=10V, VGS= 0 0.2 6 mA Gate-Source leakage current IGSS VGS= – 30V, VDS= 0 –10 nA Gate-Drain voltage VGDS IG= –10µA, VD