View 2sk117 datasheet:

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm • High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS • High breakdown voltage: V = -50 V GDS • Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k?) DS D G • High input impedance: I = -1 nA (max) (V = -30 V) GSS GS Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -50 V Gate current IG 10 mA Drain power dissipation PD 300 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max U