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2sk118

2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications • High breakdown voltage: VGDS = -50 V • High input impedance: I = -1 nA (max) (V = -30 V) GSS GS • Low noise: NF = 0.5dB (typ.) (R = 100 k?, f = 120 Hz) G • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -50 V Gate current IG 10 mA Drain power dissipation PD 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA ? TOSHIBA 2-4E1B Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = -

Keywords

 2sk118 Datasheet, Design, MOSFET, Power

 2sk118 RoHS, Compliant, Service, Triacs, Semiconductor

 2sk118 Database, Innovation, IC, Electricity

 

 
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