View 2sk1310a datasheet:

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ? 190 W (Min.) Drain Efficiency : ? = 65% (Typ.) D Frequency : f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current ID 12 A Reverse Drain Current IDR 12 A Drain Power Dissipation PD 250 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg -55~150 °C JEDEC — EIAJ — TOSHIBA 2-22C2A Weight: 17.5 g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or