View 2sk1374 datasheet:

Silicon MOS FETs (Small Signal) 2SK1374 2SK1374 Silicon N-Channel MOS Unit : mm For switching 2.1± 0.1 0.425 1.25± 0.1 0.425 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25?C) 0.2± 0.1 Parameter Symbol Rating Unit Drain-Source voltage V 50 V DS 1 : Gate Gate-Source voltage VGSO 10 V 2 : Source EIAJ : SC-70 Drain current ID ±50 mA 3 : Drain S-Mini Type Package (3-pin) Max drain current IDP ±100 mA Allowable power dissipation PD mW 150 Channel temperature Tch ?C 150 ?C Storage temperature Tstg – 55 to +150 Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS VDS= 20V, VGS= 0 1 µA Gate-Source leakag