View 2sk1381 datasheet:

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-?-MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 25 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 33 S (typ.) fs Low leakage current : IDSS = 100 µA (max) (V = 100 V) DS Enhancement-mode : V = 0.8~2.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 k?) VDGR 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 50 1. GATE Drain current A 2. DRAIN (HEAT SINK) Pulse (Note 1) IDP 200 3. SOURCE Drain power dissipation (Tc = 25°C) PD 150 W Channel temperature Tch 150